au.\*:("RIPALDA J. M")
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INSTINKT UND VERNUNFT BEI G. W. LEIBNIZ INSTINCT ET RAISON CHEZ G. W. LRIPALDA J. M.STUDIA LEIBNITIANA. 1972, Vol 4, Num 1, pp 19-47Article
POESIE UND POLITIK BEIM FRUHEN HEGEL POESIE ET POLITIQUE CHEZ LE JEUNE HEGELRIPALDA J. M.HEGEL STUDIEN. 1973, Vol 8, pp 91-118Article
C60 fullereno modificado por haces de iones de baja energía para prevenir el efecto multipactor = C60 fullereno modified by low-energy ion beams to prevent the multipactor effectMONTERO, I; ROMAN, E; RIPALDA, J. M et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2005, Vol 44, Num 2, pp 123-125, issn 0366-3175, 3 p.Article
Hydrogen-bridge bonding on semiconductor surfaces: Density-functional calculationsRIPALDA, J. M; GALE, J. D; JONES, T. S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 24, pp 245314.1-245314.4, issn 1098-0121Article
Surface reconstructions of InGaAs alloysBONE, P. A; RIPALDA, J. M; BELL, G. R et al.Surface science. 2006, Vol 600, Num 5, pp 973-982, issn 0039-6028, 10 p.Article
Morphological anisotropy during migration enhanced epitaxy of GaAs(001)RIPALDA, J. M; BONE, P. A; HOWE, P et al.Surface science. 2003, Vol 540, Num 2-3, pp L593-L599, issn 0039-6028Article
Hydrogen adsorption on GaAs(001)-c(4 × 4)KHATIRI, A; RIPALDA, J. M; KRZYZEWSKI, T. J et al.Surface science. 2003, Vol 549, Num 2, pp 143-148, issn 0039-6028, 6 p.Article
Atomic hydrogen cleaning of GaAs(001): a scanning tunnelling microscopy studyKHATIRI, A; RIPALDA, J. M; KRZYZEWSKI, T. J et al.Surface science. 2004, Vol 548, Num 1-3, pp L1-L6, issn 0039-6028Article
Temperature dependent single photon emission in InP/GaInP quantum dotsNOWAK, A. K; GALLARDO, E; SARKAR, D et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2509-2513, issn 1386-9477, 5 p.Conference Paper